2SK3541M3T5 데이터 시트보기 (PDF) - Willas Electronic Corp.
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2SK3541M3T5 Datasheet PDF : 4 Pages
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WILLAS
1S.0OA STU-R7F2AC3E PMOlaUNsTtiScC-HEOnTTcKaY pBAsRuRlIEaRteREMCTOIFIESRFSE-2T0VS- 200V
SOD-123+ PACKAGE
FM120-M+
6.0THR7U
FM1200-M+
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
Package outline
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
SOD-123H
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
0.146(3.7)
0.130(3.3)
• High surge capability.
E•leGcutarridcrainlgcfhoraorvaecrtveolrtiasgteicpsro(teTcat=io2n5. ℃ unless otherwise noted)
• Ultra high-speed switching.
• Silicon epitaxPiaal rpalamneatrecrhip, metal silicon junScytimonb.ol
Test Condition
Min
D• rLaeina-ds-ofruerecepabrrtesamkedeotwennvvioroltnamgeen
MIL-STD-19500 /228
t
a
l
stan
d
arVds(BoRf)
DSS
VGS = 0V, ID =10µA
30
G• RatoeH-Ssopurorcdeuclet faokrapgaeckcinugrrceondte suffix "G"
IGSS
Halogen free product for packing code suffix "H"
VDS =0V, VGS =±20V
ZMereocghateavnoiltcagael ddraaintacurrent
IDSS
VDS =30V, VGS =0V
G• Eatpeotxhyre: sUhLo9l4d-vVo0ltraagteed flame retardant
VGS(th) VDS =3V, ID =100µA
0.8
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Typ Max
±1
1.0
1.5 0.040(1.0)
0.024(0.6)
Unit
V
µA
µA
V
• Case : Molded plastic, SOD-123H
Static drain-source on-state resistance
RDS(on)
VGS
=4V,
ID
=10mA
0.031(0.8)
Typ.
,
• Terminals :Plated terminals, solderable per MIL-STD-750VGS =2.5V, ID =1mA
5
8
0.031(0.8) Typ.
Ω
7
13
Method 2026
Forward transconductance
gFS
VDS =3V, ID =10mA
20
mS
• Polarity : Indicated by cathode band
Dimensions in inches and (millimeters)
Input capacitance
• Mounting Position : Any
Ciss
13
O• Wutpeuigthcta:pAapcpitraonxcimeated 0.011 gram
Coss
VDS =5V,VGS =0V,f =1MHz
9
pF
Reverse transfer capacitance
Crss
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Turn-on
Ratings at 25℃
delay time
ambient temperature
unless
otherwise
spetcdi(foine)d.
Single pRhisaesetihmaelf wave, 60Hz, resistive of inductive load. tr
VGS=5V,VDD=5V, ID =10mA
For capTaucritniv-eoflfoadde,ladyertaimteecurrent by 20%
td(off)
RL=500Ω,RG=10Ω
4
15
35
ns
80
Fall time
Marking Code
RATINGS
SYMBOL FtfM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM810100-MH FM1150-MH FM1200-MH UNIT
12
13
14
15
16
18
10
115 120
Maximum Recurrent Peak Reverse Voltage
VRRM
20
30
40
50
60
80
100
150
200 Volts
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140 Volts
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200 Volts
Maximum Average Forward Rectified Current
IO
1.0
Amps
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
IFSM
RΘJA
CJ
TJ
TSTG
-55 to +125
30
40
120
- 65 to +175
-55 to +150
Amps
℃/W
PF
℃
℃
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
0.50
0.70
0.85
0.9
0.92 Volts
IR
0.5
mAmps
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
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