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BD533 데이터 시트보기 (PDF) - Continental Device India Limited
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BD533
Medium Power Linear and Switching Applications
Continental Device India Limited
BD533 Datasheet PDF : 3 Pages
1
2
3
BD533, BD535, BD537
BD534, BD536, BD538
Base current
I
B
Total power dissipation up to T
C
= 25°C P
tot
Junction temperature
T
j
Storage temperature
T
stg
THERMAL RESISTANCE
From junction to case
From junction to ambient
R
th j–c
R
th j–a
CHARACTERISTICS
T
amb
= 25°C unless otherwise specified
Collector cutoff current
I
E
= 0; V
CB
= 45 V
I
E
= 0; V
CB
= 60 V
I
E
= 0; V
CB
= 80 V
V
BE
= 0; V
CE
= 45V
V
BE
= 0; V
CE
= 60V
V
BE
= 0; V
CE
= 80V
Emitter cut-off current
I
C
= 0; V
EB
= 5 V
Breakdown voltages
I
C
= 100 mA; I
B
= 0
I
C
= 1 mA; I
E
= 0
I
E
= 1 mA; I
C
= 0
Saturation voltages
I
C
= 2.0 A; I
B
= 0.2 A
I
C
= 6.0 A; I
B
= 0.6 A
Base-emitter on voltage
I
C
= 2A; V
CE
= 2V
D.C. current gain
I
C
= 10mA; V
CE
= 5V
I
C
= 500mA; V
CE
= 2V
I
C
= 2A; V
CE
= 2V
Transition frequency
I
C
= 500 mA; V
CE
= 1V
h
FE
Groups:
I
C
= 2A; V
CE
= 2V
I
CBO
I
CBO
I
CBO
I
CES
I
CES
I
CES
I
EBO
V
CEO(sus)
*
V
CBO
V
EBO
V
CEsat
*
V
CEsat
*
V
BE(on)
*
h
FE
*
h
FE
*
h
FE
*
f
T
J
I
C
= 3A; V
CE
= 2V
I
C
= 2A; V
CE
= 2V
K
I
C
= 3A; V
CE
= 2V
* Pulsed: pulse duration = 300 µs; duty cycle = 1.5%.
max.
1.0
A
max.
50
W
max.
150
°C
–65 to +150
ºC
2.5
°C/W
70
°C/W
533 535 537
534 536 538
max. 100 – – µA
max. – 100 – µA
max. – – 100 µA
max. 100 – – µA
max. – 100 – µA
max. – – 100 µA
max.
1.0
mA
min. 45
min. 45
min.
60 80 V
60 100 V
5.0
V
max.
0.8
V
typ.
0.8
V
max.
1.5
V
min. 20 20 15
min.
40
min. 25 25 15
min.
3.0
MHz
min.
30
max.
75
min.
15
min.
40
max.
100
min.
20
Continental Device India Limited
Data Sheet
Page 2 of 3
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