BAV19WS 데이터 시트보기 (PDF) - Vishay Semiconductors
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BAV19WS Datasheet PDF : 4 Pages
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BAV19WS, BAV20WS, BAV21WS
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL MIN.
Forward voltage
Reverse leakage current
Dynamic forward resistance
Diode capacitance
Reverse recovery time
IF = 100 mA
VF
IF = 200 mA
VF
VR = 100 V
BAV19WS
IR
VR = 100 V, TJ = 100 °C BAV19WS
IR
VR = 150 V
BAV20WS
IR
VR = 150 V, TJ = 100 °C BAV20WS
IR
VR = 200 V
BAV21WS
IR
VR = 200 V, TJ = 100 °C BAV21WS
IR
IF = 10 mA
rf
VR = 0, f = 1 MHz
CD
IF = 30 mA, IR = 30 mA,
iR = 3 mA, RL = 100 Ω
trr
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
TYP.
5
MAX.
1
1.25
100
15
100
15
100
15
1.5
50
UNIT
V
V
nA
μA
nA
μA
nA
μA
Ω
pF
ns
1000
100
Tj = 100 °C
10
25 °C
1
0.1
0.01
0
18858
0.2
0.4
0.6
0.8
1
VF - Forward Voltage (V)
Fig. 1 - Forward Current vs. Forward Voltage
250
200
150
100
50
0
0 20 40 60 80 100 120 140 160 180 200
18864
Tamb - Ambient Temperature (°C)
Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature
0.3
100
0.2
DC current IF
Current (rectif.) IO
0.1
0
0
18859
30
60
90
120 150
Tamb - Ambient Temperature (°C)
Fig. 2 - Admissible Forward Current vs. Ambient Temperature
10
1
1
18861
10
100
IF - Forward Current (mA)
Fig. 4 - Dynamic Forward Resistance vs. Forward Current
Rev. 2.2, 12-Jul-17
2
Document Number: 85726
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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