PZTA55 데이터 시트보기 (PDF) - Fairchild Semiconductor

부품명

상세내역

제조사

PZTA55

PNP General Purpose Amplifier

Fairchild Semiconductor 

MPSA55

MMBTA55

PZTA55

C

C

C

BE

TO-92

SOT-23

Mark: 2H

E

B

SOT-223

E

C

B

PNP General Purpose Amplifier

This device is designed for general purpose amplifier applications

at collector currents to 300 mA. Sourced from Process 73. See

MPSA56 for characteristics.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol

Parameter

Value

VCES

Collector-Emitter Voltage

60

VCBO

Collector-Base Voltage

60

VEBO

Emitter-Base Voltage

4.0

IC

Collector Current - Continuous

500

TJ, Tstg

Operating and Storage Junction Temperature Range

-55 to +150

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Units

V

V

V

mA

°C

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

MPSA55 *MMBTA55

PD

Total Device Dissipation

Derate above 25°C

625

350

5.0

2.8

RθJC

Thermal Resistance, Junction to Case

83.3

RθJA

Thermal Resistance, Junction to Ambient

200

357

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.

**PZTA55

1,000

8.0

125

Units

mW

mW/°C

°C/W

°C/W

ã 1997 Fairchild Semiconductor Corporation

MPSA55/MMBTA55/PZTA55, Rev A

Share Link: