MMBTA13 데이터 시트보기 (PDF) - Rectron Semiconductor

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MMBTA13

SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN)

Rectron Semiconductor 

ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted)

Chatacteristic

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage (IC= 100uAdc, VBE= 0)

Collector Cutoff Current (VCB= 30Vdc, IE= 0)

Emitter Cutoff Current (VEB= 10Vdc, IC= 0)

ON CHARACTERISTICS(1)

DC Current Gain (IC= 10mAdc, VCE= 5.0Vdc)

(IC= 100mAdc, VCE= 5.0Vdc)

Collector-Emitter Saturation Voltage (IC= 100mAdc, IB= 0.1mAdc)

Base-Emitter On Voltage (IC= 100mAdc, VCE= 5.0Vdc)

SMALL-SIGNAL CHARACTERISTICS

Current-Gain-Bandwidth Product (2) (IC= 10mAdc, VCE= 5.0Vdc, f= 100MHz)

Notes : 1. Pulse Test: Pulse Width-<300ms,Duty Cycle-<2.0%

2. fT = |hfe|.ftest

Symbol

Min

V(BR)CES

30

ICBO

-

IEBO

-

hFE

VCE(sat)

VBE

5000

10,000

-

-

fT

125

Max

-

100

100

-

-

1.5

2.0

-

Unit

Vdc

nVdc

nVdc

-

Vdc

Vdc

MHz

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