UPA101B 데이터 시트보기 (PDF) - NEC => Renesas Technology
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UPA101B Datasheet PDF : 8 Pages
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µPA101
ELECTRICAL CHARACTERISTICS (Unless otherwise specified TA = +25 ˚C µPA101B, µPA101G common)
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN.
TYP.
MAX.
ICBO
Collector Cut-off Current at VCB = 5 V, IE = 0 (Q1 thru Q6)
µA
1.0
IEBO
Emitter Cut-off Current at VEB = 1 V, IC = 0 (Q5 and Q6)
µA
1.0
hFE
Direct Current Amplification, VCE = 3 V, IC = 1 mA (Q5 and Q6)
40
100
250
hFE1/hFE2 Direct Current Amplification Ratio, VCE = 3 V, IC = 1 mA, (Q5 and Q6)
0.9
1.0
1.1
CEB
Emitter to Base Capacitance at VEB = 0, f = 1 MHz
pF
1.4
2.8
fT
Gain Bandwidth Product* at VCE = 3 V, IC = 10 mA
GHz
9
* Measured by installing a single transistor in a Micro-X package: the value shown is a reference value.
CONNECTION DIAGRAM (Top View)
µPA101B
µPA101G
14 13 12 11 10 9
8
NC NC NC
8
7
6
5
Q1 Q2
Q3 Q4
Q5
Q6
NC SUB* NC
1
2
3
4
5
6
7
Q1
Q2
Q5
1
2
* Substrate should be connected to the lowest voltage point to prevent latch-up.
Q3
Q4
Q6
3
4
TEST CIRCUIT SCHEMATIC* (For Electrical Characteristics Measurements excluding fT)
IC
8 9 13 14
Q1
Q2
Q3
Q4
Q5
Q6
V8-2
VCE
1
2
6
7
IB
VBE
* See performance characteristics for voltage.
Data Sheet P10706EJ2V0DS00
3
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