RJK1536DPE 데이터 시트보기 (PDF) - Renesas Electronics

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RJK1536DPE

N-Channel Power MOSFET High-Speed Switching Use

Renesas Electronics 

RJK1536DPE

Electrical Characteristics

Item

Symbol Min

Drain to source breakdown voltage

V(BR)DSS

150

Zero gate voltage drain current

IDSS

—

Gate to source leak current

IGSS

—

Gate to source cutoff voltage

VGS(off)

2.0

Static drain to source on state voltage

VDS(on)

—

Static drain to source on state

resistance

RDS(on)

—

Input capacitance

Ciss

—

Output capacitance

Coss

—

Reverse transfer capacitance

Crss

—

Turn-on delay time

td(on)

—

Rise time

tr

—

Turn-off delay time

td(off)

—

Fall time

tf

—

Body-drain diode forward voltage

VDF

—

Body-drain diode reverse recovery time

trr

—

Notes: 3. Pulse test

Typ

—

—

—

3.0

0.60

24

5000

560

165

50

75

250

100

0.9

130

Preliminary

Max

—

100

±0.1

4.0

0.75

30

Unit

V

A

A

V

V

m

(Ta = 25°C)

Test conditions

ID = 1 mA, VGS = 0

VDS = 150 V, VGS = 0

VGS = 20 V, VDS = 0

ID = 1 mA, VDS = 10 V Note3

ID = 25 A, VGS = 10 V Note3

ID = 25 A, VGS = 10 V Note3

—

pF VDS = 10 V

—

pF VGS = 0

—

pF f = 1 MHz

—

ns VDD = 80 V

—

ns ID = 25 A

—

ns VGS = 10 V

—

ns RG = 25 

1.5

V IF = 25 A, VGS = 0

—

ns IF = 50 A, VGS = 0

diF/dt = 100 A/s

REJ03G1612-0300 Rev.3.00

Jun 30, 2010

Page 2 of 6

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