RJK1536DPN 데이터 시트보기 (PDF) - Renesas Electronics
부품명
상세내역
제조사
RJK1536DPN Datasheet PDF : 7 Pages
| |||
RJK1536DPN
Drain to Source on State Resistance
vs. Temperature
60
VGS = 10 V
Pulse Test
50
40
30
ID = 50 A
20
25 A
10 A
10
−25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
1000
Body-Drain Diode Reverse
Recovery Time
100
di / dt = 100 A / μs
VGS = 0, Ta = 25°C
10
1
10
100
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
160
120
VDS
VDD = 50 V
80 V
100 V
VGS
16
ID = 50 A
12
80
8
40
4
VDD = 100 V
80 V
50 V
0
0
40 80 120 160 200
Gate Charge Qg (nC)
Preliminary
Forward Transfer Admittance vs.
Drain Current
1000
100
Tc = −25°C
10
25°C
1
75°C
VDS = 10 V
0.1
Pulse Test
0.1
1
10
100
Drain Current ID (A)
10000
1000
100
Typical Capacitance vs.
Drain to Source Voltage
Ciss
Coss
Crss
VGS = 0
f = 1 MHz
10
1
10
100
Drain to Source Voltage VDS (V)
1000
100
Switching Characteristics
VGS = 10 V, VDD = 80 V
PW = 5 μs, duty ≤ 1 %
RG = 25 Ω
tf
td(off)
tr
td(on)
10
1
10
100
Drain Current ID (A)
REJ03G1594-0300 Rev.3.00
Jun 30, 2010
Page 4 of 6
Share Link: 