Philips Semiconductors
Low power dual-band GSM transceiver
with an image rejecting front-end
Objective specification
UAA3522HL
Notes:
1. VCCCPRF, VCCCPIF and VCCPHD must be equal to, or greater than, the other supply voltages. The other supply
voltages must be equal.
2. ‘HIGH-level’ means the control pin voltage must be equal to the supply voltage VCC. ‘LOW-level’ means the control
pin voltage must be equal to the supply ground.
3. ICC(RX) = ICC(RFIF)(RX) + ICCIF(RX) + ICCRF(RX); ICC(TX) = ICCIF(TX) + [ICCRFLO(TX) − ICCRFLO(RX)] + ICCPHD(TX) + ICCRF(TX);
ICC(SYN) = ICCIFLO(SYN) + ICCCPIF(SYN) + ICCPLL(SYN) + ICCCPRF(SYN) + ICCRFLO(SYN).
AC CHARACTERISTICS
All parameters are guaranteed at VCC = 2.8 V; Tamb = 25 °C; unless specified otherwise.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX.
UNIT
RF receiver section; measured in a 50 Ω impedance system, including external input/output baluns and
matching networks to 50 Ω (see Fig.3)
RF RECEIVER INPUTS (PINS RXIRFA AND RXIRFB)
fi(RF)(GSM)
GSM band RF input
frequency
Ri(dif)
differential input
resistance
Ci(dif)
differential input
capacitance
S11
Pi(spur)
input power matching
level of spurious input
power due to
LO leakage
note 1
925 − 960
−
146 −
−
0.85 −
−
−15 −10
−
−50 −40
MHz
Ω
pF
dB
dBm
RECEIVER IF OUTPUT (PINS RXOIFA AND RXOIFB)
fo(IF)
RL(m)
IF output frequency
matched load
resistance
LO > RF
differential; note 2
Gconv(p)
power conversion gain into specified matched load
resistance; note 1
Gripple
gain ripple
over specified frequency range;
note 3
∆G/∆T
gain variation
note 6
with temperature
F
noise figure
for Ri(dif); notes 1, 3 and 4
CP1
−1 dB input
note 1
compression point
referenced to input
at Tamb = 25 °C
over temperature range
IP3
third-order intercept note 1
point referenced to
input
DES3dB
3 dB desensitization
point referenced to
input
∆fi(RF) = 3 MHz RF input power =
−101 dBm; note 1
−
200 −
−
1−
23 24.5 27
−0.5 − +0.5
−60 −30 −
−
3.45 3.85
−23.5 − −
−24.2 − −
−18 − −
−25 − −
MHz
kΩ
dB
dB
dBm/K
dB
dBm
dBm
dBm
dBm
2000 Feb 18
13