2SB649AM 데이터 시트보기 (PDF) - Nell Semiconductor Co., Ltd
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2SB649AM
Nell Semiconductor Co., Ltd
2SB649AM Datasheet PDF : 4 Pages
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SEMICONDUCTOR
Fig.3 Typical output characteristecs
-1.0
-5.5
-5.0
-4.5
-0.8
-0.6
-0.4
-0.2
-4.0
-3 .5
-3.0
-2.5
-2.0
-1.5
TC = 25°C
-1.0
-0.5mA
lB =0
0
0
-10 -20 -30 -40 -50
Collector to emitter voltage, VCE (V)
2SB649AM Series RRooHHSS
Nell High Power Products
Fig.4 Typical transfer characteristics
-500
VCE = -5V
-100
Ta = 75°C
Ta = 25°C
Ta = -25°C
-10
-1
0
-0.2 -0.4 -0.6 -0.8 -1.0
Base to emitter voltage, VBE (V)
Fig.5 DC current transfer ratio vs.
collector current
350
300
VCE = -5V
Ta = 75°C
250
Ta = 25°C
200
150
Ta = -25°C
100
50
0
-1
-10
-100
-1000
Collector current, IC (mA)
Fig.7 Base to emitter saturation voltage vs.
collector current
-1.2
lC = 10 lB
-1.0
-0.8
-0.6
Ta= -25°C
Ta= 25°C
Ta= 75°C
-0.4
-0.2
-0
-1
-10
-100
-1000
Collector current, IC (mA)
Fig.6 Collector to emitter saturation voltage
vs. collector current
-1.2
lC = 10 lB
-1.0
-0.8
-0.6
-0.4
-0.2
Ta = 75°C
Ta = 25°C
Ta = -25°C
-0
-1
-10
-100
-1000
Collector current, IC (mA)
Fig.8 Gain bandwidth product vs.
collector current
240
200
VCE = -5 V
160
120
80
40
0
-10
-30
-100
-300
-1000
Collector current, IC (mA)
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