AT-42010 데이터 시트보기 (PDF) - HP => Agilent Technologies

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AT-42010

Up to 6 GHz Medium Power Silicon Bipolar Transistor

HP => Agilent Technologies 

Up to 6 GHz Medium Power

Silicon Bipolar Transistor

Technical Data

AT-42010

Features

• High Output Power:

12.0 dBm Typical P1 dB at 2.0␣ GHz

20.5 dBm Typical P1 dB at 4.0␣ GHz

• High Gain at

1␣ dB␣ Compression:

14.0 dB Typical G1dBat 2.0␣ GHz

9.5 dB Typical G1 dB at 4.0␣ GHz

• Low Noise Figure:

1.9 dB Typical NFOat 2.0␣ GHz

• High Gain-Bandwidth

Product: 8.0 GHz Typical fT

• Hermetic Gold-ceramic

Microstrip Package

Description

Hewlett-Packard’s AT-42010 is a

general purpose NPN bipolar

transistor that offers excellent

high frequency performance. The

AT-42010 is housed in a hermetic,

high reliability 100 mil ceramic

package. The 4 micron emitter-to-

emitter pitch enables this transis-

tor to be used in many different

functions. The 20 emitter finger

interdigitated geometry yields a

medium sized transistor with

impedances that are easy to match

for low noise and medium power

applications. This device is

designed for use in low noise,

wideband amplifier, mixer and

oscillator applications in the VHF,

UHF, and microwave frequencies.

An optimum noise match near

50␣ Ω up to 1 GHz , makes this

device easy to use as a low noise

amplifier.

The AT-42010 bipolar transistor is

fabricated using Hewlett-Packard’s

10 GHz fT Self-Aligned-Transistor

(SAT) process. The die is nitride

passivated for surface protection.

Excellent device uniformity,

performance and reliability are

produced by the use of ion-

implantation, self-alignment

techniques, and gold metalization

in the fabrication of this device.

100 mil Package

5965-8910E

4-154

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