IRF710 데이터 시트보기 (PDF) - New Jersey Semiconductor

부품명

상세내역

제조사

IRF710

N-Channel Power MOSFETs, 2.25 A, 350-400 V

New Jersey Semiconductor 

IRF710-713

MTP2N35/2N40

Electrical Characteristics (Tc = 25°C unless otherwise noted)

Symbol

Characteristic

Off Characteristics

V(BH)DSS Drain Source Breakdown Voltage1

1RF710/712/MTP2N40

IRF711/713/MTP2N35

loss

Zero Gate Voltage Drain Current

Win

400

350

Max

250

1000

IGSS

Gate-Body Leakage Current

±500

On Characteristics

Vos(lh) Gate Threshold Voltage

IRF710-713

2.0

4.0

MTP2N35/2N40

2.0

4.5

RDS(on) Static Drain-Source On-Resistance2

IRF710/711

3.6

IRF71 2/71 3/MTP2N35/40

5.0

VDS(on) Drain-Source On-Voltage2

13

MTP2N35/2N40

10

Sis

Forward Transconductance

0.5

Dynamic Characteristics

Qss

Input Capacitance

200

GOSS

Output Capacitance

50

Crss

Reverse Transfer Capacitance

15

Switching Characteristics (Tc - 25°C, Figures 11, 12)3

tdfon)

Turn-On Delay Time

10

t.

Rise Time

20

' td(oll)

Turn-Off Delay Time

10

tf

Fall Time

15

Q9

Total Gate Charge

7.5

Unit

Test Conditions

V

VGS = 0 V. ID = 250 uA

MA

VDS = Rated VDSS, VGS = 0 V

PA

VDS = 0.8 x Rated VDSs.

VGS = 0 V, TC-=125°C

nA

VGS = ± 20 V, VDS = 0 V

V

ID = 250 MA. VDS = VGS

ID = 1 mA, VDS = VGS

n

VGS = 10 V, ID -0.8 A

V

V

s to)

VGS = 10 V, I0 = 2.0 A

VGS = 10 V, ID- 1.0 A,

TC = 100°C

Vos =• 10 V, ID - 0.8 A

PF

VDS = 25 v. VGS = 0 V

( = 1.0 MHz

PF

pF

ns

VDD = 200 V, ID = 0.8 A

ns

VGS -10 V, RQEN = 50 H

RQS = 50 Ji

ns

ns

nC

VGS = 10 V, ID = 2.0 A

VDD = 200 V

Share Link: