1N4935GP 데이터 시트보기 (PDF) - Vishay Semiconductors

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1N4935GP

Glass Passivated Junction Fast Switching Rectifier

Vishay Semiconductors 

1N4933GP thru 1N4937GP

Vishay General Semiconductor

10

1

0.1

TJ = 25 °C

Pulse Width = 300 μs

1 % Duty Cycle

0.01

0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

Instantaneous Forward Voltage (V)

Fig. 3 - Typical Instantaneous Forward Characteristics

100

100

TJ = 25 °C

f = 1.0 MHz

Vsig = 50 mVp-p

10

1

1

10

100

Reverse Voltage (V)

Fig. 5 - Typical Junction Capacitance

100

10

TJ = 125 °C

10

1

TJ = 75 °C

0.1

TJ = 25 °C

0.01

0

20

40

60

80

100

Percent of Rated Peak Reverse Voltage (%)

1

0.1

0.01

0.1

1

10

100

t - Pulse Duration (s)

Fig. 4 - Typical Reverse Characteristics

Fig. 6 - Typical Transient Thermal Impedance

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

DO-204AL (DO-41)

0.107 (2.7)

0.080 (2.0)

DIA.

1.0 (25.4)

MIN.

0.205 (5.2)

0.160 (4.1)

0.034 (0.86)

0.028 (0.71)

Note

DIA.

•

Lead

diameter

is

0.026

0.023

(0.66)

(0.58)

for

suffix

“E”

part

numbers

1.0 (25.4)

MIN.

Document Number: 88509 For technical questions within your region, please contact one of the following:

Revision: 15-Mar-11

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

3

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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