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BD829 데이터 시트보기 (PDF) - Philips Electronics
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BD829
NPN power transistors
Philips Electronics
BD829 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN power transistors
Product specification
BD825; BD829
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage
BD825
BD829
collector-emitter voltage
BD825
BD829
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
T
amb
≤
25
°
C
T
mb
≤
50
°
C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R
th j-a
R
th j-mb
thermal resistance from junction to ambient
in free air
thermal resistance from junction to mounting base
MIN. MAX. UNIT
−
45
V
−
100
V
−
45
V
−
80
V
−
5
V
−
1
A
−
1.5
A
−
500
mA
−
2
W
−
8
W
−
65
+150
°
C
−
150
°
C
−
65
+150
°
C
VALUE
62.5
12.5
UNIT
K/W
K/W
1998 May 29
3
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