F1200A_04 데이터 시트보기 (PDF) - Diotec Semiconductor Germany

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F1200A_04

Fast Silicon Rectifiers

Diotec Semiconductor Germany  

F1200A, F1200D

Characteristics

Forward voltage – Durchlaßspannung Tj = 25°C IF = 5 A

VF

Leakage current – Sperrstrom

Tj = 25°C VR = VRRM

IR

Reverse recovery time

Sperrverzug

IF = 0.5 A through/über

trr

IR = 1 A to/auf IR = 0.25 A

Thermal resistance junction to ambient air

RthA

Wärmewiderstand Sperrschicht – umgebende Luft

Kennwerte

< 0.82 V

< 25 µA

< 200 ns

< 10 K/W 1)

Pulse thermal resistance versus pulse duration 1)

Impulswärmewiderstand in Abh. v.d. Impulsdauer 1)

1) Valid, if leads are kept at ambient temperature at a distance of 10 mm from case

Gültig, wenn die Anschlußdrähte in 10 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden

2

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