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2SC4774 데이터 시트보기 (PDF) - Unisonic Technologies

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2SC4774 Datasheet PDF : 4 Pages
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2SC4774
NPN SILICON TRANSISTOR
„ ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
12
V
Collector-Emitter Voltage
VCEO
6
V
Emitter-Base Voltage
VEBO
3
V
Collector Current
IC
50
mA
Collector Power Dissipation
PD
0.2
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ ELECTRICAL SPECIFICATIONS (Ta=25°C)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Transfer Ratio
Transition Frequency
Output Capacitance
Output-On Resistance
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
BVCBO IC =10μA
12
V
BVCEO IC =1mA
6
V
BVEBO IE =10μA
3
V
VCE(SAT) IC/IB =10mA/1mA
0.3 V
ICBO VCB =10V
0.5 μA
IEBO VEB =2V
0.5 μA
hFE VCE/IC =5V/5mA
270
560
fT VCE =5V, IE = 10mA, f=200MHz
300 800
MHz
Cob VCB =10V, IE =0A, f=1MHz
1 1.7 pF
RON IB =3mA, VIN =100mVrms, f=500kHz
2
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R220-017,B

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