IRFZ44V 데이터 시트보기 (PDF) - First Components International
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IRFZ44V Datasheet PDF : 5 Pages
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IRFZ44V 60A 60V N CHANNEL POWER MOSFET
Figure 11. Typical Breakdown Voltage vs
Junction Temperature
1.20
1.15
1.10
1.05
1.00
0.95
VGS = 0V
ID = 250 µA
0.90
-75 -50 -25 0.0 25 50 75 100 125 150 175
TJ, Junction Temperature (oC)
Figure 12. Typical Threshold Voltage vs
Junction Temperature
1.2
1.1
1.0
0.9
0.8
0.7
0.6 VGS = VDS
ID = 250 µA
0.5
-75 -50 -25 0.0 25 50 75 100 125 150 175
TJ, Junction Temperature (oC)
1000
OPERATION IN THIS AREA MAY BE LIMITED BY R
DS(ON)
10µs
100
100µ
10
TJ = MAX RATED, TC = 25 oC
1 Single Pulse
1
10
1.0m
10 ms
DC
100
VDS, Drain-to-Source Voltage (V)
Figure 14. Typical Capacitance
vs Drain-to-Source Voltage
3000
2500
2000
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd
Ciss
Coss # Cds + Cgd
Crss = Cgd
1500
Coss
1000
500
0
0.01
0.1
Crss
1
10
100
VDS, Drain Voltage (V)
Figure 15. Typical Gate Charge
vs Gate-to-Source Voltage
12
10
VDS=45V
8
VDS=30V
VDS=15V
6
4
2
ID = 59A
0
0 5 10 15 20 25 30 35 40
QG,Total Gate Charge (nC)
Figure 16. Typical Body Diode Transfer
Characteristics
100
80
60
40
20
0
0.3
150 oC
25 oC
-55 oC
VGS = 0V
0.5
0.7
0.9
1.1
1.3
VSD, Source-to-Drain Voltage (V)
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