ATF-34143 데이터 시트보기 (PDF) - Agilent Technologies, Inc
부품명
상세내역
제조사
ATF-34143 Datasheet PDF : 15 Pages
| |||
ATF-34143 Electrical Specifications
TA = 25°C, RF parameters measured in a test circuit for a typical device
Symbol
Parameters and Test Conditions
Idss [1]
VP [1]
Id
gm[1]
IGDO
Igss
NF
Ga
OIP3
P1dB
Saturated Drain Current
VDS = 1.5 V, VGS = 0 V
Pinchoff Voltage
VDS = 1.5 V, IDS = 10% of Idss
Quiescent Bias Current
VGS = 0.34 V, VDS = 4 V
Transconductance
VDS = 1.5 V, gm = Idss /VP
Gate to Drain Leakage Current
VGD = 5 V
Gate Leakage Current
VGD = VGS = -4 V
Noise Figure
f = 2 GHz VDS = 4 V, IDS = 60 mA
VDS = 4 V, IDS = 30 mA
f = 900 MHz VDS = 4 V, IDS = 60 mA
Associated Gain
f = 2 GHz VDS = 4 V, IDS = 60 mA
VDS = 4 V, IDS = 30 mA
f = 900 MHz VDS = 4 V, IDS = 60 mA
Output 3rd Order
f = 2 GHz VDS = 4 V, IDS = 60 mA
Intercept Point[3] +5 dBm Pout /Tone VDS = 4 V, IDS = 30 mA
f = 900 MHz VDS = 4 V, IDS = 60 mA
+5 dBm Pout /Tone
1 dB Compressed
Intercept Point[3]
f = 2 GHz VDS = 4 V, IDS = 60 mA
VDS = 4 V, IDS = 30 mA
f = 900 MHz VDS = 4 V, IDS = 60 mA
Notes:
1. Guaranteed at wafer probe level
2. Typical value determined from a sample size of 450 parts from 9 wafers.
3. Using production test board.
Units
mA
V
mA
mmho
µA
µA
dB
dB
dB
dB
dBm
dBm
dBm
dBm
Min. Typ.[2]
90 118
-0.65 -0.5
— 60
180 230
— 30
0.5
0.5
0.4
16 17.5
17
21.5
29 31.5
30
31
20
19
18.5
Max.
145
- 0.35
—
—
500
300
0.8
19
Input
50 Ohm
Transmission
Line Including
Gate Bias T
(0.5 dB loss)
Input
Matching Circuit
Γ_mag = 0.30
Γ_ang = 56°
(0.4 dB loss)
DUT
50 Ohm
Transmission
Line Including
Drain Bias T
(0.5 dB loss)
Output
Figure 5. Block diagram of 2 GHz producution test board used for Noise Figure, Associated Gain, P1dB, and OIP3 measure-
ments. This circuit represents a trade-off between an optimal noise match and associated impedance matching circuit
losses. Circuit losses have been de-embedded from actual measurements.
3
Share Link: 