2SB1386-P_02 데이터 시트보기 (PDF) - Secos Corporation.

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2SB1386-P_02

PNP Silicon Low Frequency Transistor

Secos Corporation. 

Elektroni sche Bauelemente

2SB1386

PNP Silicon

Low Frequency Transistor

-5

lC/lB=50

-2

-1

-0.5



−25°C

25°C

Ta=100°C

-0.2

-0.1

-0.05

-0.02

-0.01

-2m -5m-0.01-0.02 -0.05-0.1 -0.2 -0.5 -1 -2 -5 -10

COLLECTOR CURRENT : IC (A)

Fig.10 Collector-emitter saturation

voltage vs. collector current (V)

1 000

500

 Ta=25°C

VCE=−6V

200

100

50

20

10

5

2

1

1 2 5 10 20 50 100 200 500 1000

EMITTER CURRENT : IE (mA)

Fig.11 Gain bandwidth product

vs. emitter current

1000

500

Ta=25°C

f=1MHz

IE=0A

200

100

50

20

10

-0.1 -0.2 -0.5 -1 -2 -5 -10 -20 -50

COLLECTOR TO BASE VOLTAGE : VCB (V)

Fig.12 Collector output capacitance

vs. collector-base voltage

1000

500

200

100

50

Ta=25°C

f=1MHz

IC=0A



20

10

-0.1 -0.2 -0.5 -1 -2

-5 -10

EMITTER TO BASE VOLTAGE : VEB (V)

Fig.13 Emitter input capacitance

vs. emitter-base voltage

http://www.SeCoSGmbH.com

01-Jun-2002 Rev. A

Any changing of specification will not be informed individual

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