BD244 데이터 시트보기 (PDF) - Inchange Semiconductor
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BD244 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
BD244/A/B/C
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BD244
VCEO(SUS)
Collector-emitter
sustaining voltage
BD244A
BD244B
IC=-30mA; IB=0
BD244C
VCEsat Collector-emitter saturation voltage
VBE
Base-emitter on voltage
IC=-6A;IB=-1 A
IC=-6A ; VCE=-4V
BD244/A VCE=-30V; IB=0
ICEO
Collector cut-off current
BD244B/C VCE=-60V; IB=0
BD244
VCE=-45V; VBE=0
BD244A VCE=-60V; VBE=0
ICES
Collector cut-off current
BD244B VCE=-80V; VBE=0
BD244C VCE=-100V; VBE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-0.3A ; VCE=-4V
hFE-2
DC current gain
IC=-3A ; VCE=-4V
MIN TYP. MAX UNIT
-45
-60
V
-80
-100
-1.5
V
-2.0
V
-0.7
mA
-0.4
mA
1
mA
30
15
2
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