DTA114TE 데이터 시트보기 (PDF) - Secos Corporation.
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DTA114TE Datasheet PDF : 2 Pages
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Elektronische Bauelemente
DTA114TE / DTA114TUA / DTA114TCA /
DTA114TSA
PNP Digital Transistors (Built-in Resistors)
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors.
The bias resistors consist of thin-film resistors
with complete isolation to allow positive biasing
of the input. They also have the advantage of
almost completely eliminating parasitic effects.
Only the on/off conditions need to be set for
operation, making device design easy.
DTA114TE (SOT-523)
DTA114TUA (SOT-323)
EQUIVALENT CIRCUIT
Addreviated symbol：94
DTA114TSA (TO-92S)
Addreviated symbol：94
DTA114TCA (SOT-23)
Addreviated symbol：94
ABSOLUTE MAXIMUM RATINGS at (TA = 25°C unless otherwise noted)
Parameter
Symbol
LIMITS(DTA114T□)
E
UA
CA
SA
Collector-Base Voltage
VCBO
-50
Collector-Emitter Voltage
VCEO
-50
Emitter-Base Voltage
VEBO
-5
Collector Current-Continuous
IC
-100
Collector Dissipation
PC
150
200
300
Junction & Storage temperature
TJ, TSTG
150, -55~150
Unit
V
V
mA
mW
℃
ELECTRICAL CHARACTERISTICS at (TA = 25°C unless otherwise noted)
Parameter
Symbol
Min.
Typ.
Max. Unit Test Conditions
Collector-base breakdown voltage V(BR)CBO
-50
-
Collector-emitter
breakdown voltage
V(BR)CEO
-50
-
-
IC= -50A, IE= 0
V
-
IC= -1mA, IB= 0
Emitter-base breakdown voltage
V(BR)EBO
-5
-
-
V IE= -50A, IC=0
Collector cut-off current
ICBO
-
-
-0.5
A VCB= -50V, IE=0
Emitter cut-off current
IEBO
-
-
-0.5
A VEB= -4V, IC=0
DC current gain
hFE
100
250
600
VCE= -5V, IC= -1mA
Collector-emitter
saturation voltage
Transition frequency
Input resistor
VCE(sat)
-
fT
-
R1
7
-
-0.3
V IC= -10mA, IB= -1mA
250
-
MHz
VCE= -10V, IC= -5mA,
f= 100MHz
10
13
kΩ
http://www.SeCoSGmbH.com/
11-Aug-2010 Rev. A
Any changes of specification will not be informed individually.
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