BFR35AP 데이터 시트보기 (PDF) - Infineon Technologies

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BFR35AP

Low Noise Silicon Bipolar RF Transistor

Infineon Technologies 

Low Noise Silicon Bipolar RF Transistor

• For low distortion broadband amplifiers and

oscillators up to 2GHz at collector currents

from 0.5mA to 20 mA

• Pb-free (RoHS compliant) package

• Qualification report according to AEC-Q101 available

BFR35AP

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

BFR35AP

Marking

Pin Configuration

GEs

1=B

2=E

3=C

Package

SOT23

Maximum Ratings at TA = 25 °C, unless otherwise specified

Parameter

Symbol

Value

Collector-emitter voltage

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Base current

Total power dissipation1)

TS ≤ 93 °C

Junction temperature

Storage temperature

VCEO

VCES

VCBO

VEBO

IC

IB

Ptot

TJ

TStg

15

20

20

2.5

45

4

280

150

-55 ... 150

Thermal Resistance

Parameter

Symbol

Value

Junction - soldering point2)

RthJS

205

1TS is measured on the collector lead at the soldering point to the pcb

2For calculation of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)

Unit

V

mA

mW

°C

Unit

K/W

1

2013-11-21

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