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BC868 데이터 시트보기 (PDF) - Galaxy Semi-Conductor
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BC868
NPN medium power Transistor
Galaxy Semi-Conductor
BC868 Datasheet PDF : 3 Pages
1
2
3
Production specification
NPN medium power Transistor
BC868
ELECTRICAL CHARACTERISTICS
@ Ta=25
℃
unless otherwise specified
Parameter
Symbol Test conditions
MIN MAX UNIT
Collector cut-off current
V
CB
=25V I
E
=0
I
CBO
V
CB
=25V I
E
=0,T
A
=150
℃
100 nA
10
μ
A
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
I
EBO
h
FE
V
CE(sat)
V
CE
=5V I
C
=0
V
CE
=10V I
C
=5mA
V
CE
=1V I
C
=500mA
V
CE
=1V I
C
=1A
I
C
=1A I
B
=100mA
100 nA
50
85 375
60
0.5 V
Base-emitter voltage
Transition frequency
CLASSIFICATION H
FE
Range
85-375
V
BE
I
C
=1A ,V
CE
=1V
f
T
V
CE
=5V, I
C
=10mA,
f=100MHz
40
85-160
100-250
Marking
CAC
CBC
CCC
TYPICAL CHARACTERISTICS
@ Ta=25
℃
unless otherwise specified
1V
MHz
160-375
CDC
E066
Rev.A
www.gmicroelec.com
2
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