BC868 데이터 시트보기 (PDF) - Philips Electronics
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BC868 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN medium power transistor
Product specification
BC868
FEATURES
• High current (max. 1 A)
• Low voltage (max. 20 V).
APPLICATIONS
• General purpose switching and amplification
• Power applications such as audio output stages.
DESCRIPTION
NPN medium power transistor in a SOT89 plastic
package. PNP complement: BC869.
MARKING
TYPE NUMBER
BC868
BC868-25
MARKING CODE
CAC
CDC
PINNING
PIN
1
2
3
emitter
collector
base
DESCRIPTION
handbook, halfpage
2
3
1
1
2
Bottom view
3
MAM296
Fig.1 Simplified outline (SOT89) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
32
20
5
1
2
200
1.35
+150
150
+150
UNIT
V
V
V
A
A
mA
W
°C
°C
°C
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
1999 Apr 08
2
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