BC857C 데이터 시트보기 (PDF) - Yea Shin Technology Co., Ltd

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BC857C

General Purpose Transistors

Yea Shin Technology Co., Ltd 

DEVICE CHARACTERISTICS

BC85xSeries

BC857/ BC858

2.0

1.5

VCE= –10 V

T A = 25°C

1.0

0.7

0.5

0.3

0.2

–0.2 –0.5 –1.0 –2.0 –5.0

–10 –20

–50 –100 –200

–1.0

–0.9 T A = 25°C

–0.8

V BE(sat) @ I C /I B=10

–0.7

–0.6

V BE(on) @ V CE = –10 V

–0.5

–0.4

–0.3

–0.2

–0.1

0

–0.1 –0.2

V CE(sat) @ I C /I B = 10

–0.5 –1.0 –2.0

–5.0 –10 –20

–50 –100

I C , COLLECTOR CURRENT (mAdc)

Figure 1. Normalized DC Current Gain

I C , COLLECTOR CURRENT (mAdc)

Figure 2. “Saturation” and “On” Voltages

–2.0

T A = 25°C

–1.6

–1.2

–0.8 I C =

–10 mA

–0.4

I C= –50 mA I C= –200 mA

I = –20 mA

C

I C= –100 mA

0

–0.02

–0.1

–1.0

I B , BASE CURRENT (mA)

Figure 3. Collector Saturation Region

–10 –20

10.0

C ib

7.0

T A=25°C

5.0

3.0

C ob

2.0

1.0

–0.4

–0.6 –1.0

–2.0

–4.0 –6.0 –10

V R , REVERSE VOLTAGE (VOLTS)

Figure 5. Capacitances

–20 –30 –40

1.0

–55°C to +125°C

1.2

1.6

2.0

2.4

2.8

–0.2

–1.0

–10

–100

I C , COLLECTOR CURRENT (mA)

Figure 4. Base–Emitter Temperature Coefficient

400

300

200

100

V CE =–10V

80

T A = 25°C

60

40

30

20

–0.5

–1.0

–2.0 –3.0 –5.0

–10

–20 –30 –50

I C , COLLECTOR CURRENT (mAdc)

Figure 6. Current–Gain – Bandwidth Product

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REV.02 20130403

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