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DTB143EKT146_12 데이터 시트보기 (PDF) - ROHM Semiconductor

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DTB143EKT146_12 Datasheet PDF : 6 Pages
1 2 3 4 5 6
DTB143EK
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Supply voltage
Input voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Symbol
VCC
VIN
IC(MAX.)*1
PD *2
Tj
Tstg
Data Sheet
Values
Unit
-50
V
-30 to +10
V
-500
mA
200
mW
150
C
-55 to +150
C
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Input voltage
VI(off)
VI(on)
VCC = -5V, IO = -100mA
VO = -0.3V, IO = -20mA
Output voltage
VO(on) IO / II = -50mA / -2.5mA
Input current
II
VI = -5V
Output current
IO(off) VCC = -50V, VI = 0V
DC current gain
GI
VO = -5V, IO = -50mA
Input resistance
R1
-
Resistance ratio
R2/R1
-
Transition frequency
fT *1
VCE = -10V, IE = 50mA,
f = 100MHz
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
Min.
-
-3.0
-
-
-
47
3.29
0.8
-
Typ.
-
-
-0.1
-
-
-
4.7
1.0
200
Max.
-0.5
-
-0.3
-1.8
-0.5
-
6.11
1.2
-
Unit
V
V
mA
mA
-
kW
-
MHz
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
2/5
2012.07 - Rev.D

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