STB4NK60Z-1_11 데이터 시트보기 (PDF) - STMicroelectronics

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STB4NK60Z-1_11

N-channel 600 V, 1.76 Ω, 4 A SuperMESH™ Power MOSFET in DPAK, D2PAK, IPAK, I2PAK, TO-220, TO-220FP

STMicroelectronics 

Electrical ratings

STB4NK60Zx, STD4NK60Zx, STP4NK60Z, STP4NK60ZFP

Table 4. Avalanche characteristics

Symbol

Parameter

Avalanche current, repetitive or not-repetitive

IAR

(pulse width limited by Tj Max)

Single pulse avalanche energy

EAS

(starting TJ = 25 °C, ID=IAR, VDD= 50 V)

Value

Unit

4

A

120

mJ

4/28

Doc ID 8882 Rev 7

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