Philips Semiconductors
BGD902
860 MHz, 18.5 dB gain power doubler amplifier
3. Ordering information
Table 3: Ordering information
Type number Package
Name
Description
Version
BGD902
-
rectangular single-ended package; aluminium flange; SOT115J
2 vertical mounting holes; 2 × 6-32 UNC and 2 extra
horizontal mounting holes; 7 gold-plated in-line leads
4. Limiting values
Table 4: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VB
supply voltage
-
Vi
RF input voltage
-
Tstg
storage temperature
−40
Tmb
mounting base temperature
−20
Max
30
70
+100
+100
Unit
V
dBmV
°C
°C
5. Characteristics
Table 5: Characteristics
Bandwidth 40 MHz to 900 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω.
Symbol Parameter
Conditions
Gp
power gain
f = 50 MHz
f = 900 MHz
SL
slope cable
f = 40 MHz to 900 MHz
equivalent
FL
flatness of
f = 40 MHz to 900 MHz
frequency
response
s11
input return
f = 40 MHz to 80 MHz
losses
f = 80 MHz to 160 MHz
f = 160 MHz to 320 MHz
f = 320 MHz to 640 MHz
f = 640 MHz to 900 MHz
s22
output return
f = 40 MHz to 80 MHz
losses
f = 80 MHz to 160 MHz
f = 160 MHz to 320 MHz
f = 320 MHz to 750 MHz
f = 750 MHz to 900 MHz
s21
phase response f = 50 MHz
Min
Typ
Max Unit
18.2 18.5 18.8 dB
19
19.5 20
dB
0.4
0.9
1.4
dB
-
±0.15 ±0.3
dB
21
24
22
26
22
28
19
22
18
21
25
32
25
33
21
29
20
25
19
22
−45
-
-
dB
-
dB
-
dB
-
dB
-
dB
-
dB
-
dB
-
dB
-
dB
-
dB
+45
deg
9397 750 14435
Product data sheet
Rev. 07 — 8 March 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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