BT139-600 데이터 시트보기 (PDF) - NXP Semiconductors.
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BT139-600 Datasheet PDF : 12 Pages
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Philips Semiconductors
BT139 series
Triacs
10
Zth(j-mb)
(K/W)
1
001aab098
(1)
(2)
10−1
10−2
10−3
10−5
10−4
10−3
10−2
10−1
(1) Unidirectional.
(2) Bidirectional.
Fig 6. Transient thermal impedance as a function of pulse width.
PD
tp
t
1
10
tp (s)
6. Static characteristics
Table 5: Static characteristics
Tj = 25 °C unless otherwise stated.
Symbol Parameter
Conditions
IGT
gate trigger
VD = 12 V;
current
IT = 0.1 A;
Figure 8
T2+ G+
T2+ G−
T2− G−
T2− G+
IL
latching current VD = 12 V;
IGT = 0.1 A;
Figure 9
T2+ G+
T2+ G−
T2− G−
T2− G+
IH
holding current VD = 12 V;
IGT = 0.1 A;
Figure 10
VT
on-state voltage IT = 20 A;
Figure 11
BT139
BT139-F
BT139-G
Unit
Min Typ Max Min Typ Max Min Typ Max
-
5 35 -
5 25 -
5 50 mA
-
8 35 -
8 25 -
8 50 mA
-
10 35 -
10 25 -
10 50 mA
-
22 70 -
22 70 -
22 100 mA
-
7 40 -
7 40 -
7 60 mA
-
20 60 -
20 60 -
20 90 mA
-
8 40 -
8 40 -
8 60 mA
-
10 60 -
10 60 -
10 90 mA
-
6 45 -
6 45 -
6 60 mA
-
1.2 1.6 -
1.2 1.6 -
1.2 1.6 V
9397 750 13358
Product data sheet
Rev. 04.00 — 6 July 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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