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2SD1163A 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SD1163A
Silicon NPN Power Transistors
Inchange Semiconductor
2SD1163A Datasheet PDF : 3 Pages
1
2
3
Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1163,2SD1163A
CHARACTERISTICS
Tj=25
℃
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V
(BR)CEO
Collector-emitter
breakdown voltage
2SD1163
2SD1163A
I
C
=10mA ;R
BE
=
∞
V
(BR)EBO
Emitter-base breakdown voltage
I
E
=10mA ;I
C
=0
V
CEsat
Collector-emitter
saturation voltage
2SD1163
2SD1163A
I
C
=5A, I
B
=0.5A
V
BEsat
Base-emitter saturation voltage
I
C
=5A, I
B
=0.5A
I
CBO
Collector
cut-offcurrent
2SD1163 V
CB
=300V;I
E
=0
2SD1163A V
CB
=350V;I
E
=0
h
FE
DC current gain
I
C
=5A ; V
CE
=5V
Switching times
t
f
Fall time
I
CM
=3.5A;I
B1
=0.45A
MIN TYP MAX UNIT
120
V
150
6
V
2.0
V
1.0
1.2
V
5
mA
5
mA
25
0.5
μ
s
2
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