FDS4559 데이터 시트보기 (PDF) - Fairchild Semiconductor
부품명
상세내역
제조사
FDS4559 Datasheet PDF : 8 Pages
| |||
Typical Characteristics: Q1
10
ID = 4.5A
8
6
VDS = 10V
30V 20V
4
2
0
0
2
4
6
8
10
12
14
Qg, GATE CHARGE (nC)
Figure 17. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
VGS= 10V
SINGLE PULSE
0.1
RθJA= 135oC/W
TA= 25oC
100µs
1m
10ms
100ms
1s
DC
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 19. Maximum Safe Operating Area.
900
800
700
600
500
400
300
200
100
0
0
CISS
f = 1MHz
VGS = 0 V
COSS
CRSS
10
20
30
40
50
60
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 18. Capacitance Characteristics.
40
SINGLE PULSE
RθJA = 135oC/W
30
TA = 25oC
20
10
0
0.01
0.1
1
10
100
SINGLE PULSE TIME (SEC)
1000
Figure 20. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
RθJA(t) = r(t) + RθJA
RθJA = 135°C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10
100
1000
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS4559 Rev C1(W)
Share Link: 