Philips Semiconductors
Battery power unit
Objective specification
TEA1202TS
CHARACTERISTICS
Tamb = −20 to +80 °C; all voltages are measured with respect to ground; positive currents flow into the IC; unless
otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
DC/DC converter
UPCONVERSION; pin U/D = LOW
VI(up)
VO(up)
VI(start)
VO(uvlo)
input voltage
output voltage
start-up input voltage
undervoltage lockout voltage
IL < 10 mA
note 1
DOWNCONVERSION; pin U/D = HIGH
VI(dwn)
VO(dwn)
input voltage
output voltage
note 2
REGULATION
∆VO(wdw)
output voltage window size as PWM mode
a function of output voltage
VI(start) −
5.50 V
VO(uvlo) −
5.50 V
0.93 0.96 1.00 V
2.0
2.2
2.4
V
VO(uvlo) −
1.30
−
5.50 V
5.50 V
1.5
2.0
2.5
%
CURRENT LEVELS
Iq(DCDC)
Ishdwn
Ilim(max)
∆Ilim
quiescent current
current in shut-down mode
maximum current limit
current limit deviation
ILX(max)
maximum continuous current
at pins LX1 and LX2
note 3
Ilim set to 1.0 A; note 4
upconversion
downconversion
Tamb = 80 °C
−
110
−
µA
0
2
10
µA
−
5
−
A
−12
−
−12
−
−
−
+12
%
+12
%
1.0
A
POWER MOSFETS
RDSon(N)
drain-to-source on-state
resistance NFET
Tj = 27 °C
−
110
−
mΩ
RDSon(P)
drain-to-source on-state
resistance PFET
Tj = 27 °C
−
125
−
mΩ
EFFICIENCY
η
efficiency upconversion
VI = 1.2 V; VO up to 3.3 V;
note 5
IL = 1 mA
IL = 10 mA
IL = 100 mA
−
66
−
%
−
81
−
%
−
85
−
%
TIMING
fsw
fi(sync)
switching frequency
synchronization clock input
frequency
PWM mode
480
600
720
kHz
6
13
20
MHz
tstart
start-up time
note 6
−
10
−
ms
2000 Jun 08
10