BCW71 데이터 시트보기 (PDF) - Diotec Semiconductor Germany

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BCW71

Surface mount Si-Epitaxial PlanarTransistors

Diotec Semiconductor Germany  

General Purpose Transistors

Characteristics (Tj = 25/C)

Base saturation voltage – Basis-Sättigungsspannung 1)

IC = 10 mA, IB = 0.5 mA

VBEsat

IC = 50 mA, IB = 2.5 mA

VBEsat

DC current gain – Kollektor-Basis-Stromverhältnis 1)

VCE = 5 V, IC = 10 :A

BCW 71 hFE

BCW 72 hFE

VCE = 5 V, IC = 2 mA

BCW 71 hFE

BCW 72 hFE

Base-Emitter voltage – Basis-Emitter-Spannung 1)

VCE = 5 V, IC = 2 mA

Gain-Bandwidth Product – Transitfrequenz

VBEon

VCE = 5 V, IC = 10 mA, f = 100 MHz

fT

Collector-Base Capacitance – Kollektor-Basis-Kapazität

VCB = 10 V, IE = ie = 0, f = 1 MHz

CCB0

Noise figure – Rauschzahl

VCE = 5 V, IC = 200 :A, RG = 2 kS,

f = 1 kHz, )f = 200 Hz

F

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

Recommended complementary PNP transistors

Empfohlene komplementäre PNP-Transistoren

BCW 71, BCW 72

Kennwerte (Tj = 25/C)

Min.

Typ.

Max.

–

750 mV

–

–

850 mV

–

–

90

–

–

150

–

110

–

220

200

–

450

550 mV

–

700 mV

100 MHz

–

–

–

2.5 pF

–

–

–

10 dB

RthA

420 K/W 2)

BCW 69, BCW 70

Marking – Stempelung

BCW 71 = K1

BCW 72 = K2

1) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%

2) Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß

01.11.2003

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