US1A 데이터 시트보기 (PDF) - Diode Semiconductor Korea
부품명
상세내역
제조사
US1A Datasheet PDF : 2 Pages
| |||
Diode Semiconductor Korea
US1A ---US1M
SURFACE MOUNT RECTIFIERS
REVERSE VOLTAGE: 50 - 1000 V
FORWARD CURRENT: 1.0 A
FEATURES
◇ Plastic package has underwriters laboratories
vvvvvflam mability classification 94V-0
◇ For surface mount applications
◇ Low profile package
◇ Eas y pick and place
◇ Ultrafas t recovery tim es for high efficiency
◇ Low forward voltage,low power loss
◇ Built-in strain relief,ideal for autom ated placem ent
◇ High temperature soldering:
111 250oC/10 seconds on terminals
DO-214AC(SMA)
4.5± 0.1
5.1± 0.2
MECHANICAL DATA
1.3± 0.2
◇ Cas e:JEDEC DO-214AC,m olded plas tic body over
passivated chip
◇ Term inals:Solder Plated, solderable per MIL-STD-750,
1111Method 2026
◇ Polarity: Color band denotes cathode end
◇ Weight: 0.002 ounces, 0.064 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25oC ambient tem perature unless otherwise specified
0.2± 0.05
Dimensions in millimeters
US1A
Device marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current at
TL=110OC
Peak forw ard surge current 8.3ms single half-
sine-w ave superimposed on rated load(JEDEC
Method)
VRRM
VRWS
VDC
IF(AV)
IFSM
US1A
50
35
50
Maximum instantaneous f orward voltage at1.0A VF
Maximum DC reverse current @TA=25oC
at rated DC blockjing voltage
@TA=125oC
Maximum reverse recovery time at IF=0.5A
IR=1.0A Irr=0.25A
Typical junction capacitance at 4.0V,1MHZ
Maximum thermal resistance (NOTE1)
Operating temperature range
IR
trr
CJ
RθJA
RθJL
TJ
Storage temperature range
TSTG
NOTE: 1.P.C.B.mounted on 0.2X0.2"(5.0X5.0mm) copper pad area
US1B
US1B
100
70
100
US1D US1G US1J US1K US1M
UNITS
US1D US1G US1J US1K US1M
200 400 600 800 1000
V
140 280 420 560 700
V
200 400 600 800 1000
V
1.0
A
30.0
A
1.0
5.0
100.0
50
20
55
20
-55------- +150
-55------- +150
1.7
V
μΑ
75
ns
15
pF
oC/W
oC
oC
www.diode.kr
Share Link: 