TIP126 데이터 시트보기 (PDF) - TAI-SAW TECHNOLOGY CO., LTD.

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TIP126

PNP Epitaxial Silicon Darlington Transistor

TAI-SAW TECHNOLOGY CO., LTD. 

TIP125/126/127

Monolithic Construction With Built In

Base-Emitter Shunt Resistors

- High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.)

- Collector-Emitter Sustaining Voltage

- Low Collector-Emitter Saturation Voltage

- Industrial Use

- Complementary to TIP120/121/122

Absolute Maximum Ratings Ta=25℃ unless otherwise noted

CHARACTERISTICS

SYMBOL RATING UNIT

Collector-Base Voltage : TIP125

VCBO

-60

V

: TIP126

-80

V

: TIP127

-100

V

Collector-Emitter Voltage : TIP125

VCEO

-60

V

: TIP126

-80

V

: TIP127

-100

V

Emitter-Base Voltage

Collector Current(DC)

Collector Current(Pulse)

Base Current

Collector Dissipation(Ta=25℃)

Collector Dissipation(Tc=25℃)

Junction Temperature

Storage Temperature

VEBO

IC

ICP

IB

PC

PC

TJ

TSTG

-5

V

-5

A

-8

A

-120

㎃

2

W

65

W

150

℃

-65~150 ℃

PNP Epitaxial

Silicon Darlington

Transistor

Equivalent Circuit

TO-220

1. Base

2. Collector

3. Emitter

12 3

Electrical Characteristics Ta=25℃ unless otherwise noted

CHARACTERISTICS

SYMBOL

Test Condition

Collector-Emitter Sustaining Voltage

: TIP125

: TIP126

: TIP127

VCEO(SUS)

IC=-100mA, IB=0

Collector Cut-off Current

ICEO

: TIP125

: TIP126

: TIP127

Collector Cut-off Current

ICBO

: TIP125

: TIP126

: TIP127

Emitter Cut-off Current

IEBO

DC Current Gain

hFE

Collector-Emitter Saturation Voltage

VCE(sat)

Base-Emitter ON Voltage

Output Capacitance

* Pulse Test: PW≤300us, Duty Cycle≤2%

VBE(on)

Cob

VCE= -30V,IB=0

VCE= -40V,IB=0

VCE= -50V,IB=0

VCE= -60V,IE=0

VCE= -80V,IE=0

VCE= -100V,IE=0

VEB= -5V,IC=0

VCE= -3V,IC= -0.5A

VCE= -3V,IC= -3A

IC= -3A,IB= -12mA

IC= -5A,IB= -20mA

VCE= -3V,IC= -3A

VCB= -10V,IE=0, f=0.1MHz

Min

-60

-80

-100

1000

1000

Max

Unit

V

V

V

-2

㎃

-2

㎃

-2

㎃

-1

㎃

-1

㎃

-1

㎃

-2

㎃

-2

V

-4

V

-2.5

V

300

㎊

◎ SEMIHOW REV.A0,Oct 2007

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