BFP181TRW 데이터 시트보기 (PDF) - Vishay Semiconductors
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BFP181TRW Datasheet PDF : 5 Pages
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BFP181T / BFP181TW / BFP181TRW
Vishay Semiconductors
Electrical DC Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Collector-emitter cut-off current VCE = 15 V, VBE = 0
Collector-base cut-off current VCB = 10 V, IE = 0
Emitter-base cut-off current
VEB = 1 V, IC = 0
Collector-emitter breakdown
voltage
IC = 1 mA, IB = 0
Collector-emitter saturation
voltage
IC = 15 mA, IB =1.5 mA
DC forward current transfer ratio VCE = 6 V, IC = 5 mA
VCE = 6 V, IC = 10 mA
Symbol
Min
Typ.
Max
Unit
ICES
100
µA
ICBO
100
nA
IEBO
1
µA
V(BR)CEO
10
V
VCEsat
0.1
0.4
V
hFE
50
100
150
hFE
100
www.vishay.com
2
Document Number 85012
Rev. 1.4, 02-Mar-05
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