BFP181TW 데이터 시트보기 (PDF) - Vishay Semiconductors

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BFP181TW

Silicon NPN Planar RF Transistor

Vishay Semiconductors 

BFP181T / BFP181TW / BFP181TRW

Vishay Semiconductors

Electrical AC Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Transition frequency

VCE = 3 V, IC = 6 mA,

fT

f = 500 MHz

6.8

GHz

VCE = 8 V, IC = 10 mA,

fT

f = 500 MHz

8.0

GHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz

Ccb

0.3

pF

Collector-emitter capacitance VCE = 10 V, f = 1 MHz

Cce

0.2

pF

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz

Ceb

0.45

pF

Noise figure

VCE = 5 V, IC = 3 mA, ZS = ZSopt,

F

f = 900 MHz

1.5

dB

VCE = 5 V, IC = 3 mA, ZS = ZSopt,

F

f = 1.75 GHz

2.2

dB

Power gain

VCE = 8 V, IC = 8 mA, ZS = 50 Ω,

Gpe

16.5

dB

ZL = ZLopt, f = 900 MHz

VCE = 8 V, IC = 8 mA, ZS = 50 Ω,

Gpe

13.5

dB

ZL = ZLopt, f = 1.75 GHz

Transducer gain

VCE = 8 V, IC = 8 mA, Z0 = 50 Ω,

|S21e|2

16

dB

f = 900 MHz

Package Dimensions in mm

0.50(0.020)

0.35 (0.014)

0.9 (0.035)

0.75 (0.029)

0.15 (0.006)

0.08 (0.003)

1.1 (0.043)

0.9 (0.035)

3.0 (0.117)

2.8 (0.109)

Mounting Pad Layout

1.8 (0.070)

1.6 (0.062)

0.65 (0.025)

1.17 (0.046)

2.0 (0.078)

1.8 (0.070)

0...0.1 (0...0.004)

ISO Method E

96 12240

Document Number 85012

Rev. 1.4, 02-Mar-05

www.vishay.com

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