BFP181(2001) 데이터 시트보기 (PDF) - Infineon Technologies

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BFP181
(Rev.:2001)

NPN Silicon RF Transistor

Infineon Technologies 

NPN Silicon RF Transistor

For low-noise, high-gain broadband amplifiers at

collector currents from 0.5 mA to 12 mA

fT = 8 GHz

F = 1.45 dB at 900 MHz

BFP181

3

4

2

1 VPS05178

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type

BFP181

Marking

RFs

Pin Configuration

1=C 2=E 3=B 4=E

Package

SOT143

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Base current

Total power dissipation

TS
75°C 1)

Junction temperature

Ambient temperature

Storage temperature

VCEO

VCES

VCBO

VEBO

IC

IB

Ptot

Tj

TA

Tstg

12

V

20

20

2

20

mA

2

175

mW

150

°C

-65 ... 150

-65 ... 150

Thermal Resistance

Junction - soldering point 2)

RthJS

430

K/W

1TS is measured on the collector lead at the soldering point to the pcb

2For calculation of RthJA please refer to Application Note Thermal Resistance

1

Jun-21-2001

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