2SC5555ZD 데이터 시트보기 (PDF) - Renesas Electronics

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2SC5555ZD

Silicon NPN Epitaxial VHF / UHF wide band amplifier

Renesas Electronics 

2SC5555

Electrical Characteristics

Item

Collector to base breakdown voltage

Collector cutoff current

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

Collector output capacitance

Gain bandwidth product

Power gain

Noise figure

(Ta = 25°C)

Symbol Min Typ Max Unit

Test Conditions

V(BR)CBO

15

—

—

V IC = 10 µA, IE = 0

ICBO

—

—

1

µA VCB = 12 V, IE = 0

ICEO

—

—

1

mA VCE = 8 V, RBE = ∞

IEBO

—

—

0.35

µA VEB = 1.5 V, IC = 0

hFE

50

100 160

VCE = 1 V, IC = 5 mA

Cob

—

0.55 0.75

pF VCB = 1 V, IE = 0, f = 1 MHz

fT

6.5

9

—

GHz VCE = 1 V, IC = 5 mA

PG

11

14

—

dB VCE = 1 V, IC = 5 mA

f = 900 MHz

NF

—

1.1

1.7

dB VCE = 1 V, IC = 5 mA

f = 900 MHz

Rev.3.00 Nov 14, 2006 page 2 of 7

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