BCW33LT1
104
VCC = 30 Vdc
103
102
ICEO
101
100
ICBO
AND
10–1
ICEX @ VBE(off) = 3.0 Vdc
10–2
–4 –2
00
0 + 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160
TJ, JUNCTION TEMPERATURE (°C)
Figure 16A.
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
A train of periodical power pulses can be represented by the model
as shown in Figure 16A. Using the model and the device thermal
response the normalized effective transient thermal resistance of
Figure 16 was calculated for various duty cycles.
To find ZθJA(t), multiply the value obtained from Figure 16 by the
steady state value RθJA.
Example:
The MPS3904 is dissipating 2.0 watts peak under the following
conditions:
t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2)
Using Figure 16 at a pulse width of 1.0 ms and D = 0.2, the reading of
r(t) is 0.22.
The peak rise in junction temperature is therefore
∆T = r(t) x P(pk) x RθJA = 0.22 x 2.0 x 200 = 88°C.
For more information, see AN–569.
6
Motorola Small–Signal Transistors, FETs and Diodes Device Data