IRF150 데이터 시트보기 (PDF) - Intersil
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IRF150 Datasheet PDF : 7 Pages
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IRF150
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Continuous Source to DrainCurrent
Pulse Source to Drain Current (Note 3)
ISD
ISDM
Modified MOSFET
Symbol Showing the
Integral Reverse P-N
D
Junction Diode
G
MIN TYP
-
-
-
-
MAX
40
160
UNITS
A
A
S
Diode Source to Drain Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD
trr
QRR
TJ = 25oC, ISD = 40A, VGS = 0V (Figure 13)
TJ = 150oC, ISD = 40A, dISD/dt = 100A/µs
TJ = 25oC, ISD = 5.5A, dISD/dt = 100A/µs
-
-
2.5
V
-
600
-
ns
-
3.3
-
µC
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 10V, starting TJ = 25oC, L = 170µH, RG = 50Ω, Peak IAS = 40A. See Figures 15, 16.
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
50
100
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
40
32
24
16
8
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1.0
0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
0.01
10-5
10-4
10-3
10-2
0.1
t1, RECTANGULAR PULSE DURATION (s)
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
3
PDM
t1
t2t2
NOTES:
DUTY FACTOR: D = t1/t2
TJ = PDM x ZθJC + TC
1
10
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