BSR15 데이터 시트보기 (PDF) - Diotec Semiconductor Germany
부품명
상세내역
제조사
BSR15 Datasheet PDF : 2 Pages
| |||
Switching Transistors
BSR 15, BSR 16
Characteristics (Tj = 25/C)
DC current gain – Kollektor-Basis-Stromverhältnis 1)
- VCE = 10 V, - IC = 0.1 mA
BSR 15 hFE
BSR 16 hFE
- VCE = 10 V, - IC = 1 mA
BSR 15 hFE
BSR 16 hFE
- VCE = 10 V, - IC = 10 mA
BSR 15 hFE
BSR 16 hFE
- VCE = 10 V, - IC = 500 mA
BSR 15 hFE
BSR 16 hFE
- VCE = 10 V, - IC = 150 mA
hFE
Collector saturation volt. – Kollektor-Sättigungsspg. 1)
- IC = 150 mA, - IB = 15 mA
- VCEsat
- IC = 500 mA, - IB = 50 mA
- VCEsat
Base saturation voltage – Basis-Sättigungsspannung 1)
- IC = 150 mA, - IB = 15 mA
- IC = 500 mA, - IB = 50 mA
Gain-Bandwidth Product – Transitfrequenz
- VBEsat
- VBEsat
- VCE = 20 V, - IC = 20 mA, f = 100 MHz
fT
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE = ie = 0, f = 1 MHz
CCB0
Emitter-Base Capacitance – Emitter-Basis-Kapazität
- VEB = 2 V, IC = ic = 0, f = 1 MHz
CEB0
Switching times – Schaltzeiten
turn-on time
ton
delay time
rise time
turn-off time
storage time
td
ICon = 150 mA
IBon = 15 mA
- IBoff = 15 mA
tr
toff
ts
fall time
tf
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
35
–
–
75
–
–
50
–
–
100
–
–
75
–
–
100
–
–
30
–
–
50
–
–
100
–
300
–
–
400 mV
–
–
1.6 V
–
–
1.3 V
–
–
2.6 V
200 MHz
–
–
–
8 pF
–
–
30 pF
–
–
–
40 ns
–
–
12 ns
–
–
30 ns
–
–
365 ns
–
–
300 ns
–
–
65 ns
RthA
420 K/W 2)
BSR 13, BSR 14
Marking - Stempelung
BSR 15 = T7
BSR 16 = T8
1) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
2) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
01.11.2003
9
Share Link: 