BC559C 데이터 시트보기 (PDF) - ON Semiconductor
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BC559C Datasheet PDF : 4 Pages
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BC560C
Low Noise Transistors
PNP Silicon
Features
• These are Pb−Free Devices*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage
Collector −Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Total Power Dissipation @ TA = 25°C
Derate above TA = 25°C
Total Power Dissipation @ TA = 25°C
Derate above TA = 25°C
Operating and Storage Junction
Temperature Range
VCEO
VCBO
VEBO
IC
PD
−45
−50
−5.0
−100
625
5.0
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
PD
1.5
W
12
mW/°C
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
200
°C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
COLLECTOR
1
2
BASE
3
EMITTER
TO−92
CASE 29
STYLE 17
123
STRAIGHT LEAD
BULK PACK
1
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
BC56
0C
AYWW G
G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2012
1
July, 2012 − Rev. 4
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
BC560CG
BC560CZL1G
TO−92
(Pb−Free)
TO−92
(Pb−Free)
5000 Units / Bulk
2000 / Ammo Pack
Publication Order Number:
BC560C/D
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