74HCT40105N 데이터 시트보기 (PDF) - NXP Semiconductors.
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74HCT40105N Datasheet PDF : 37 Pages
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NXP Semiconductors
74HC40105; 74HCT40105
4-bit x 16-word FIFO register
10. Dynamic characteristics
Table 6. Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); CL = 50 pF unless otherwise specified; for test circuit, see Figure 18.
Symbol Parameter Conditions
25 C
40 C to +85 C 40 C to +125 C Unit
Min Typ Max Min Max
Min
Max
74HC40105
tpd
propagation MR to DIR or DOR; see
[1]
delay
Figure 7
VCC = 2.0 V
- 52 175 -
220
-
265 ns
VCC = 4.5 V
- 19 35
-
44
-
53 ns
VCC = 5 V; CL = 15 pF
- 16 -
-
-
-
-
ns
VCC = 6.0 V
- 15 30
-
37
-
45 ns
SO to Qn; see Figure 10 [1]
VCC = 2.0 V
- 116 400 -
500
-
600 ns
VCC = 4.5 V
- 42 80
-
100
-
120 ns
VCC = 5 V; CL = 15 pF
- 37 -
-
-
-
-
ns
VCC = 6.0 V
- 34 68
-
85
-
102 ns
tPHL
HIGH to
SI to DIR; see Figure 8
[1]
LOW
propagation
VCC = 2.0 V
- 52 210 -
265
-
315 ns
delay
VCC = 4.5 V
- 19 42
-
53
-
63 ns
VCC = 5 V; CL = 15 pF
- 16 -
-
-
-
-
ns
VCC = 6.0 V
- 15 36
-
45
-
54 ns
SO to DOR; see
[1]
Figure 11
VCC = 2.0 V
- 55 210 -
265
-
315 ns
VCC = 4.5 V
- 20 42
-
53
-
63 ns
VCC = 5 V; CL = 15 pF
- 17 -
-
-
-
-
ns
VCC = 6.0 V
- 16 36
-
45
-
54 ns
tPLH
LOW to
SI to DOR; see Figure 14 [1][5]
HIGH
propagation
VCC = 2.0 V
- 564 2000 -
2500
-
3000 ns
delay
VCC = 4.5 V
- 205 400 -
500
-
600 ns
VCC = 6.0 V
- 165 340 -
425
-
510 ns
SO to DIR; see Figure 9 [1][6]
VCC = 2.0 V
- 701 2500 -
3125
-
3750 ns
VCC = 4.5 V
- 255 500 -
625
-
750 ns
VCC = 6.0 V
- 204 425 -
532
-
638 ns
ten
enable time OE to Qn; see Figure 16 [2]
VCC = 2.0 V
- 41 150 -
190
-
225 ns
VCC = 4.5 V
- 15 30
-
38
-
45 ns
VCC = 6.0 V
- 12 26
-
33
-
38 ns
74HC_HCT40105
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 25 September 2013
© NXP B.V. 2013. All rights reserved.
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