FQAF34N20L 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FQAF34N20L Datasheet PDF : 8 Pages
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Typical Characteristics
V
GS
Top : 10.0 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
Bottom : 3.0 V
101
100
10-1
※ Notes :
1. 250μs Pulse Test
2. T = 25℃
C
100
101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
0.25
0.20
V = 5V
GS
0.15
V = 10V
GS
0.10
0.05
0.00
0
※ Note : T = 25℃
J
30
60
90
120
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
7000
6300
5600
4900
4200
3500
2800
2100
1400
700
0
10-1
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
C
iss
C
oss
C
rss
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2000 Fairchild Semiconductor International
101
150℃
100
25℃
10-1
0
-55℃
※ Notes :
1. VDS = 30V
2. 250μs Pulse Test
2
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150℃ 25℃
※ Notes :
1. V = 0V
GS
2. 250μs Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
V = 40V
DS
V = 100V
8
DS
VDS = 160V
6
4
2
※ Note : ID = 34 A
0
0
20
40
60
80
100
120
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, June 2000
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