NXP Semiconductors
860 MHz, 20 dB gain power doubler
amplifier
Product specification
BGD904; BGD904MI
−50
CTB
(dB)
−60
−70
(1)
(2)
(3)
(4)
mda983
52
Vo
(dBmV)
(2)
(3)
48
(4)
(1)
44
−80
40
−90
0
36
200
400
600
800 1000
f (MHz)
ZS = ZL = 75 Ω; VB = 24 V; 110 chs; tilt = 9 dB (50 to 550 MHz);
tilt = 3.5 dB at −6 dB offset (550 to 750 MHz).
(1) Vo.
(2) Typ. +3 σ.
(3) Typ.
(4) Typ. −3 σ.
Fig.2 Composite triple beat as a function of
frequency under tilted conditions.
−50
Xmod
(dB)
−60
−70
mda984
52
(1)
(2)
(3)
(4)
Vo
(dBmV)
48
(1)
44
−80
40
−90
0
36
200
400
600
800 1000
f (MHz)
ZS = ZL = 75 Ω; VB = 24 V; 110 chs; tilt = 9 dB (50 to 550 MHz);
tilt = 3.5 dB at −6 dB offset (550 to 750 MHz).
(1) Vo.
(2) Typ. +3 σ.
(3) Typ.
(4) Typ. −3 σ.
Fig.3 Cross modulation as a function of frequency
under tilted conditions.
−50
CSO
(dB)
−60
−70
−80
(1)
(2)
(3)
(4)
mda985
52
Vo
(dBmV)
48
(2)
(1)
(3)
44
(4)
40
−90
0
36
200
400
600
800 1000
f (MHz)
ZS = ZL = 75 Ω; VB = 24 V; 110 chs; tilt = 9 dB (50 to 550 MHz);
tilt = 3.5 dB at −6 dB offset (550 to 750 MHz).
(1) Vo.
(2) Typ. +3 σ.
(3) Typ.
(4) Typ. −3 σ.
Fig.4 Composite second order distortion as a
function of frequency under tilted
conditions.
2001 Nov 01
5