FQA24N50F 데이터 시트보기 (PDF) - Inchange Semiconductor
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FQA24N50F Datasheet PDF : 2 Pages
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isc N-Channel MOSFET Transistor
·FEATURES
·With TO-3PN packaging
·High speed switching
·Very high commutation ruggedness
·Easy to use
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operationz
·APPLICATIONS
·Switching applications
INCHANGE Semiconductor
FQA24N50F
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
500
VGSS
ID
IDM
Gate-Source Voltage
Drain Current-Continuous@TC=25℃
TC=100℃
Drain Current-Single Pulsed
±30
24
15.2
96
PD
Total Dissipation
290
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT
V
V
A
A
W
℃
℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX
0.43
40
UNIT
℃/W
℃/W
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