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1PS79SB10 데이터 시트보기 (PDF) - Philips Electronics
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1PS79SB10
Schottky barrier diode
Philips Electronics
1PS79SB10 Datasheet PDF : 8 Pages
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Philips Semiconductors
Schottky barrier diode
GRAPHICAL DATA
handboo
1
k,
0
h
3
alfpage
IF
(mA)
10
2
(1) (2) (3)
MSA892
10
(1) (2) (3)
1
10
1
0
0.4
0.8
1.2
VF (V)
(1) T
amb
= 125
°
C.
(2) T
amb
= 85
°
C.
(3) T
amb
= 25
°
C.
Fig.2 Forward current as a function of forward
voltage; typical values.
Product specification
1PS79SB10
10
3
IR
(
µ
A)
10
2
10
MSA893
(1)
(2)
1
(3)
10
1
0
10
20
VR (V)
30
(1) T
amb
= 125
°
C.
(2) T
amb
= 85
°
C.
(3) T
amb
= 25
°
C.
Fig.3 Reverse current as a function of reverse
voltage; typical values.
15
Cd
(pF)
10
MSA891
5
0
0
10
20
V R (V)
30
f = 1 MHz; T
amb
= 25
°
C.
Fig.4 Diode capacitance as a function of reverse
voltage; typical values.
1998 Jul 16
4
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