BFP420(2007) 데이터 시트보기 (PDF) - Infineon Technologies

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BFP420
(Rev.:2007)

NPN Silicon RF Transistor

Infineon Technologies 

BFP420

For non-linear simulation:

· Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators.

· If you need simulation of the reverse characteristics, add the diode with the

C'-E'- diode data between collector and emitter.

· Simulation of package is not necessary for frequencies < 100MHz.

For higher frequencies add the wiring of package equivalent circuit around the

non-linear transistor and diode model.

Note:

· This transistor is constructed in a common emitter configuration. This feature causes

an additional reverse biased diode between emitter and collector, which does not

effect normal operation.

C

B

EE

EHA07307

Transistor Schematic Diagram

The common emitter configuration shows the following advantages:

· Higher gain because of lower emitter inductance.

· Power is dissipated via the grounded emitter leads, because the chip is mounted

on copper emitter leadframe.

Please note, that the broadest lead is the emitter lead.

Common Emitter S- and Noise-parameter

For detailed S- and Noise-parameters please contact your local Infineon Technologies

distributor or sales office to obtain a Infineon Technologies Application Notes

CD-ROM or see Internet: http://www.infineon.com/silicondiscretes

2007-04-20

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