B1018A 데이터 시트보기 (PDF) - New Jersey Semiconductor
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B1018A Datasheet PDF : 2 Pages
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Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage lc= -50mA; IB= 0
VcE(sat) Collector-Emitter Saturation Voltage |c= -4A; IB=-0.4A
VsE(sat) Base-Emitter Saturation Voltage
lc= -4A; IB= -0.4A
ICBO
Collector Cutoff Current
VcB=-100V;lE=0
IEBO
Emitter Cutoff Current
VEB= -5V; lc= 0
hpE-1
DC Current Gain
hFE-2
DC Current Gain
lc= -1A; VGE= -1V
|c= -4A; VCE= -1V
COB
Output Capacitance
le=0;VCB=-10V;f=1MHz
fr
Current-Gain—Bandwidth Product
lc= -1A; VCE= -4V
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
lc=-3.0A,lBi=-lB2=-0.3A,
VCc=-30V;RL=10n
• hpE-1 Classifications
0
Y
70-140
120-240
2SB1018A
MIN TYP. MAX UNIT
-80
V
-0.5
V
-1.4
V
-5
MA
-5
uA
70
240
30
250
PF
10
MHz
0.4
us
2.5
us
0.5
|J S
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